RF FETs, MOSFETs

Results: 2
Frequency
30MHz ~ 150MHz400MHz
Gain
8dB ~ 17dB16dB
Voltage - Test
28 V50 V
Current Rating (Amps)
2.5A16A
Noise Figure
1dB-
Current - Test
25 mA250 mA
Power - Output
15W150W
Voltage - Rated
65 V125 V
Package / Case
211-07211-11, Style 2
Supplier Device Package
211-07, Style 2211-11, Style 2
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
Frequency
Gain
Voltage - Test
Current Rating (Amps)
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
424
In Stock
1 : ¥403.10000
Tray
-
Tray
Active
MOSFET (Metal Oxide)
N-Channel
400MHz
16dB
28 V
2.5A
1dB
25 mA
15W
65 V
211-07
211-07, Style 2
0
In Stock
Check Lead Time
60 : ¥634.96550
Tray
-
Tray
Active
MOSFET (Metal Oxide)
N-Channel
30MHz ~ 150MHz
8dB ~ 17dB
50 V
16A
-
250 mA
150W
125 V
211-11, Style 2
211-11, Style 2
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RF FETs, MOSFETs


RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.