RF FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Frequency
136MHz ~ 941MHz870MHz
Gain
17.2dB-
Voltage - Test
10.8 V12.5 V
Current Rating (Amps)
10µA-
Power - Output
8.4W16W
Voltage - Rated
30 V40 V
Package / Case
16-VDFN Exposed PadPLD-1.5W
Supplier Device Package
16-DFN (4x6)PLD-1.5W
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Frequency
Gain
Voltage - Test
Current Rating (Amps)
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Mounting Type
Package / Case
Supplier Device Package
16-DFN
AFM907NT1
RF MOSFET LDMOS 10.8V 16DFN
NXP USA Inc.
2,449
In Stock
1 : ¥26.11000
Cut Tape (CT)
1,000 : ¥13.79641
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
LDMOS
136MHz ~ 941MHz
-
10.8 V
10µA
-
100 mA
8.4W
30 V
Surface Mount
16-VDFN Exposed Pad
16-DFN (4x6)
PLD-1.5W
AFT09MS015NT1
RF MOSFET LDMOS 12.5V PLD-1.5W
NXP USA Inc.
2,146
In Stock
1 : ¥51.15000
Cut Tape (CT)
1,000 : ¥29.03080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
LDMOS
870MHz
17.2dB
12.5 V
-
-
100 mA
16W
40 V
Surface Mount
PLD-1.5W
PLD-1.5W
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of 2

RF FETs, MOSFETs

RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.