RF FETs, MOSFETs

Results: 3
Manufacturer
Ampleon USA Inc.NXP USA Inc.WAVEPIA.,Co.Ltd
Packaging
BoxCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNGaN HEMT
Frequency
100MHz ~ 2.69GHz2.3GHz ~ 5GHz6GHz
Gain
4.6dB11dB13.9dB
Voltage - Test
28 V48 V
Current - Test
10 mA40 mA70 mA
Power - Output
1.3W6W8W
Voltage - Rated
125 V150 V160 V
Package / Case
6-LDFN Exposed Pad6-VDFN Exposed Pad360BH
Supplier Device Package
6-DFN (4.5x4)6-PDFN (7x6.5)360BH
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Frequency
Gain
Voltage - Test
Current Rating (Amps)
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Mounting Type
Package / Case
Supplier Device Package
6-PDFN
A3G26D055NT4
RF MOSFET GAN 48V 6DFN
NXP USA Inc.
2,193
In Stock
1 : ¥170.68000
Cut Tape (CT)
2,500 : ¥155.70919
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
GaN
100MHz ~ 2.69GHz
13.9dB
48 V
-
-
40 mA
8W
125 V
Surface Mount
6-LDFN Exposed Pad
6-PDFN (7x6.5)
RF MOSFET GAN 48V 6DFN
C4H2350N05Z
RF MOSFET GAN 48V 6DFN
Ampleon USA Inc.
703
In Stock
1 : ¥150.24000
Cut Tape (CT)
1,000 : ¥76.76167
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
GaN
2.3GHz ~ 5GHz
4.6dB
48 V
-
-
10 mA
1.3W
150 V
Surface Mount
6-VDFN Exposed Pad
6-DFN (4.5x4)
WP2806008UH
WP2806008UH
RF MOSFET GAN HEMT 28V 360BH
WAVEPIA.,Co.Ltd
12
In Stock
2 : ¥412.01000
Box
-
Box
Active
GaN HEMT
6GHz
11dB
28 V
-
-
70 mA
6W
160 V
Surface Mount
360BH
360BH
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RF FETs, MOSFETs

RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.