Gate Drivers

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	DigiKey Programmable	Driven Configuration	Channel Type	Number of Drivers	Gate Type	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Input Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

IRS2008STRPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	28,854 In Stock	1 : ¥7.82000 Cut Tape (CT) 2,500 : ¥3.33095 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Not Verified	Half-Bridge	Synchronous	2	N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	200 V	70ns, 30ns	-40°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
UCC27710DR IC GATE DRVR HALF-BRIDGE 8SOIC Texas Instruments	4,775 In Stock	1 : ¥12.67000 Cut Tape (CT) 2,500 : ¥5.79572 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Not Verified	Half-Bridge	Synchronous	2	IGBT, N-Channel, P-Channel MOSFET	10V ~ 20V	1.5V, 1.6V	500mA, 1A	-	600 V	40ns, 20ns	-40°C ~ 125°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
UCC27712D IC GATE DRVR HALF-BRIDGE 8SOIC Texas Instruments	2,610 In Stock	1 : ¥16.41000 Tube	-	Tube	Active	Not Verified	Half-Bridge	Independent	2	IGBT, N-Channel, P-Channel MOSFET	10V ~ 20V	0.8V, 2.4V	1.8A, 2.8A	-	600 V	16ns, 10ns	-40°C ~ 125°C (TA)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
UCC27712QDQ1 IC GATE DRVR HALF-BRIDGE 8SOIC Texas Instruments	0 In Stock Check Lead Time	1 : ¥18.47000 Tube	-	Tube	Active	Not Verified	Half-Bridge	Independent	2	IGBT, N-Channel, P-Channel MOSFET	10V ~ 20V	0.8V, 2.4V	1.8A, 2.8A	-	600 V	16ns, 10ns	-40°C ~ 125°C (TA)	Automotive	AEC-Q100	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

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Gate Drivers

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.