Gate Drivers

Results: 2
Manufacturer
Diodes IncorporatedTexas Instruments
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Driven Configuration
Half-BridgeLow-Side
Channel Type
IndependentSingle
Number of Drivers
12
Gate Type
IGBT, N-Channel MOSFETIGBT, N-Channel, P-Channel MOSFET
Voltage - Supply
3V ~ 18V40V (Max)
Logic Voltage - VIL, VIH
1.2V, 1.6V-
Current - Peak Output (Source, Sink)
4A, 6A8A, 8A
Input Type
CMOS/TTLNon-Inverting
Rise / Fall Time (Typ)
6ns, 7ns13.4ns, 12.4ns
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 130°C (TJ)
Package / Case
14-SOIC (0.295", 7.50mm Width)SOT-23-6
Supplier Device Package
14-SOICSOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-23-6
ZXGD3004E6TA
IC GATE DRVR LOW-SIDE SOT23-6
Diodes Incorporated
85,153
In Stock
726,000
Factory
1 : ¥7.31000
Cut Tape (CT)
3,000 : ¥2.13593
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Low-Side
Single
1
IGBT, N-Channel MOSFET
40V (Max)
-
8A, 8A
Non-Inverting
13.4ns, 12.4ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
14 SOIC
UCC21530DWKR
IC GATE DRVR HALF-BRIDGE 14SOIC
Texas Instruments
6,632
In Stock
1 : ¥34.94000
Cut Tape (CT)
2,000 : ¥17.55093
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Independent
2
IGBT, N-Channel, P-Channel MOSFET
3V ~ 18V
1.2V, 1.6V
4A, 6A
CMOS/TTL
6ns, 7ns
-40°C ~ 130°C (TJ)
Surface Mount
14-SOIC (0.295", 7.50mm Width)
14-SOIC
Showing
of 2

Gate Drivers

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.