Gate Drivers

Results: 2
Manufacturer
Infineon TechnologiesTexas Instruments
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Channel Type
IndependentSynchronous
Voltage - Supply
4.75V ~ 5.25V, 6V ~ 18V10V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 2.5V-
Current - Peak Output (Source, Sink)
290mA, 600mA1.5A, 3A
Rise / Fall Time (Typ)
500ps, 500ps70ns, 30ns
Operating Temperature
-40°C ~ 125°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable Flank
Package / Case
8-SOIC (0.154", 3.90mm Width)19-WFQFN Exposed Pad
Supplier Device Package
8-SOIC19-WQFN (3x4)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRS2008STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
Infineon Technologies
28,826
In Stock
1 : ¥7.82000
Cut Tape (CT)
2,500 : ¥3.33095
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Synchronous
2
N-Channel MOSFET
10V ~ 20V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
200 V
70ns, 30ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
19-WQFN
LMG1210RVRR
IC GATE DRVR HALF-BRIDGE 19WQFN
Texas Instruments
7,652
In Stock
1 : ¥45.48000
Cut Tape (CT)
3,000 : ¥22.81058
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Independent
2
N-Channel MOSFET
4.75V ~ 5.25V, 6V ~ 18V
-
1.5A, 3A
Non-Inverting
200 V
500ps, 500ps
-40°C ~ 125°C (TJ)
Surface Mount, Wettable Flank
19-WFQFN Exposed Pad
19-WQFN (3x4)
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Gate Drivers


Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.