Gate Drivers

Results: 2
Manufacturer
onsemiTexas Instruments
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Gate Type
IGBT, N-Channel MOSFETN-Channel MOSFET
Voltage - Supply
8V ~ 14V11V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 2.2V1.2V, 2.5V
Current - Peak Output (Source, Sink)
350mA, 650mA1A, 1A
High Side Voltage - Max (Bootstrap)
108 V600 V
Rise / Fall Time (Typ)
15ns, 15ns50ns, 30ns
Operating Temperature
-40°C ~ 125°C (TJ)-40°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)8-WDFN Exposed Pad
Supplier Device Package
8-SOIC8-WSON (4x4)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
8-WFDFN Exposed Pad
LM5109BSD/NOPB
IC GATE DRVR HALF-BRIDGE 8WSON
Texas Instruments
17,500
In Stock
1 : ¥13.60000
Cut Tape (CT)
1,000 : ¥5.09404
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Independent
2
N-Channel MOSFET
8V ~ 14V
0.8V, 2.2V
1A, 1A
Non-Inverting
108 V
15ns, 15ns
-40°C ~ 125°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-WSON (4x4)
8-SOIC
FAN73833MX
IC GATE DRVR HALF-BRIDGE 8SOIC
onsemi
0
In Stock
3,000
Factory
Active
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Independent
2
IGBT, N-Channel MOSFET
11V ~ 20V
1.2V, 2.5V
350mA, 650mA
Non-Inverting
600 V
50ns, 30ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
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of 2

Gate Drivers


Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.