Gate Drivers

Results: 2
Manufacturer
Littelfuse Inc.Renesas Electronics Corporation
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Driven Configuration
Half-BridgeLow-Side
Channel Type
SingleSynchronous
Number of Drivers
12
Gate Type
IGBT, N-Channel, P-Channel MOSFETN-Channel MOSFET
Voltage - Supply
4.5V ~ 35V6V ~ 18V
Logic Voltage - VIL, VIH
0.8V, 3V1.47V, 1.84V
Current - Peak Output (Source, Sink)
3A, 4A9A, 9A
Rise / Fall Time (Typ)
22ns, 15ns435ns, 365ns
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 125°C (TJ)
Package / Case
8-VDFN Exposed Pad10-WDFN Exposed Pad
Supplier Device Package
8-DFN-EP (5x4)10-TDFN (4x4)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
10-TDFN,L10-4
HIP2210FRTZ-T
IC GATE DRVR HALF-BRIDGE 10TDFN
Renesas Electronics Corporation
37,130
In Stock
1 : ¥11.00000
Cut Tape (CT)
6,000 : ¥6.56784
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Synchronous
2
N-Channel MOSFET
6V ~ 18V
1.47V, 1.84V
3A, 4A
Non-Inverting
115 V
435ns, 365ns
-40°C ~ 125°C (TJ)
Surface Mount
10-WDFN Exposed Pad
10-TDFN (4x4)
8-VDFN
IXDD609D2TR
IC GATE DRVR LOW-SIDE 8DFN
Littelfuse Inc.
9,576
In Stock
1 : ¥17.26000
Cut Tape (CT)
2,000 : ¥7.91230
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Low-Side
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5V ~ 35V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN-EP (5x4)
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Gate Drivers


Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.