Gate Drivers

Results: 2
Manufacturer
Infineon TechnologiesMicrochip Technology
Series
-EiceDRIVER™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Driven Configuration
High-SideLow-Side
Gate Type
N-Channel MOSFETN-Channel, P-Channel MOSFET
Voltage - Supply
3V ~ 58V4.5V ~ 18V
Logic Voltage - VIL, VIH
0.7V, 2.5V0.8V, 2.4V
Current - Peak Output (Source, Sink)
175mA, 1.4A (Typ)1.5A, 1.5A
Input Type
Inverting, Non-InvertingNon-Inverting
Rise / Fall Time (Typ)
25ns, 25ns7µs, 2µs
Operating Temperature
-40°C ~ 150°C (TJ)-40°C ~ 85°C (TA)
Package / Case
8-SOIC (0.154", 3.90mm Width)24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package
8-SOICPG-TSDSO-24
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
PG-TSDSO-24
2ED2410EMXUMA1
IC GATE DRVR HIGH-SIDE 24TSSOP
Infineon Technologies
8,453
In Stock
1 : ¥38.94000
Cut Tape (CT)
3,000 : ¥18.28682
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
High-Side
Independent
2
N-Channel MOSFET
3V ~ 58V
0.7V, 2.5V
175mA, 1.4A (Typ)
Non-Inverting
7µs, 2µs
-40°C ~ 150°C (TJ)
Surface Mount
24-TSSOP (0.154", 3.90mm Width) Exposed Pad
PG-TSDSO-24
8-SOIC
TC4428AEOA
IC GATE DRVR LOW-SIDE 8SOIC
Microchip Technology
1,547
In Stock
1 : ¥13.77000
Tube
-
Tube
Active
Not Verified
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4.5V ~ 18V
0.8V, 2.4V
1.5A, 1.5A
Inverting, Non-Inverting
25ns, 25ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
Showing
of 2

Gate Drivers

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.