Gate Drivers

Results: 2
Manufacturer
Analog Devices Inc.Microchip Technology
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Driven Configuration
High-SideLow-Side
Channel Type
IndependentSingle
Number of Drivers
12
Gate Type
IGBT, N-Channel, P-Channel MOSFETN-Channel MOSFET
Voltage - Supply
3.5V ~ 15V4.5V ~ 18V
Logic Voltage - VIL, VIH
0.8V, 2.4V-
Current - Peak Output (Source, Sink)
4A, 4A-
Rise / Fall Time (Typ)
15ns, 18ns90ns, 40ns
Operating Temperature
-40°C ~ 125°C (TJ)-40°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)16-TFSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package
8-SOIC16-MSOP-EP
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
16-MSOP-EP
LTC7003EMSE#TRPBF
IC GATE DRVR HIGH-SIDE 16MSOP
Analog Devices Inc.
7,709
In Stock
1 : ¥56.79000
Cut Tape (CT)
2,500 : ¥31.03063
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
High-Side
Single
1
N-Channel MOSFET
3.5V ~ 15V
-
-
Non-Inverting
60 V
90ns, 40ns
-40°C ~ 125°C (TJ)
Surface Mount
16-TFSOP (0.118", 3.00mm Width) Exposed Pad
16-MSOP-EP
8-SOIC
MCP14E4-E/SN
IC GATE DRVR LOW-SIDE 8SOIC
Microchip Technology
1,194
In Stock
1 : ¥20.83000
Tube
-
Tube
Active
Not Verified
Low-Side
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5V ~ 18V
0.8V, 2.4V
4A, 4A
Non-Inverting
-
15ns, 18ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
Showing
of 2

Gate Drivers


Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.