Gate Drivers

Results: 2
Manufacturer
onsemiTexas Instruments
Series
-FLEXMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Driven Configuration
Half-BridgeLow-Side
Number of Drivers
26
Voltage - Supply
4.75V ~ 5.25V8V ~ 17V
Logic Voltage - VIL, VIH
0.8V, 2V1.2V, 2.55V
Current - Peak Output (Source, Sink)
4A, 4A-
Rise / Fall Time (Typ)
7.2ns, 5.5ns277ns (Max), 277ns (Max)
Operating Temperature
-40°C ~ 140°C (TJ)-40°C ~ 150°C (TJ)
Package / Case
8-PowerSOIC (0.154", 3.90mm Width)32-VFQFN Exposed Pad
Supplier Device Package
8-SO PowerPad32-QFN (5x5)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
LP3891EMR-1.8/NOPB
UCC27211AQDDARQ1
IC GATE DRVR HALF-BRIDGE 8SOPWR
Texas Instruments
27,998
In Stock
1 : ¥19.81000
Cut Tape (CT)
2,500 : ¥9.06447
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Independent
2
N-Channel MOSFET
8V ~ 17V
1.2V, 2.55V
4A, 4A
Non-Inverting
120 V
7.2ns, 5.5ns
-40°C ~ 140°C (TJ)
Automotive
AEC-Q100
Surface Mount
8-PowerSOIC (0.154", 3.90mm Width)
8-SO PowerPad
32-TQFN_488AM
NCV7520MWTXG
IC GATE DRVR LOW-SIDE 32QFN
onsemi
8,224
In Stock
1 : ¥36.39000
Cut Tape (CT)
5,000 : ¥17.03508
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Low-Side
Independent
6
N-Channel MOSFET
4.75V ~ 5.25V
0.8V, 2V
-
Non-Inverting
-
277ns (Max), 277ns (Max)
-40°C ~ 150°C (TJ)
Automotive
AEC-Q100
Surface Mount
32-VFQFN Exposed Pad
32-QFN (5x5)
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Gate Drivers


Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.