Gate Drivers

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Driven Configuration
Half-BridgeLow-Side
Channel Type
SingleSynchronous
Number of Drivers
12
Gate Type
IGBT, N-Channel MOSFETN-Channel MOSFET
Voltage - Supply
10V ~ 20V40V (Max)
Logic Voltage - VIL, VIH
0.8V, 2.7V-
Current - Peak Output (Source, Sink)
1.9A, 2.3A2A, 2A
Rise / Fall Time (Typ)
40ns, 20ns210ns, 240ns
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
8-DIP (0.300", 7.62mm)SOT-23-6
Supplier Device Package
8-PDIPSOT-26
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT 26
ZXGD3009E6TA
IC GATE DRVR LOW-SIDE SOT26
Diodes Incorporated
19,990
In Stock
78,000
Factory
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥1.15671
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Low-Side
Single
1
N-Channel MOSFET
40V (Max)
-
2A, 2A
Non-Inverting
-
210ns, 240ns
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-6
SOT-26
8-DIP
IR2184PBF
IC GATE DRVR HALF-BRIDGE 8DIP
Infineon Technologies
1,493
In Stock
1 : ¥28.57000
Tube
-
Tube
Not For New Designs
Not Verified
Half-Bridge
Synchronous
2
IGBT, N-Channel MOSFET
10V ~ 20V
0.8V, 2.7V
1.9A, 2.3A
Non-Inverting
600 V
40ns, 20ns
-40°C ~ 150°C (TJ)
-
-
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
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Gate Drivers


Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.