FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

CSD87330Q3D MOSFET 2N-CH 30V 20A 8LSON Texas Instruments	28,639 In Stock	1 : ¥8.87000 Cut Tape (CT) 2,500 : ¥5.28508 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	Logic Level Gate	30V	20A	-	2.1V @ 250µA	5.8nC @ 4.5V	900pF @ 15V	6W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PowerLDFN	8-LSON (3.3x3.3)
BUK7K45-100EX MOSFET 2N-CH 100V 21.4A LFPAK56D Nexperia USA Inc.	2,400 In Stock	1 : ¥10.67000 Cut Tape (CT) 1,500 : ¥4.67346 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	100V	21.4A	37.6mOhm @ 5A, 10V	4V @ 1mA	25.9nC @ 10V	1533pF @ 25V	53W	-55°C ~ 175°C (TJ)	Automotive	AEC-Q100	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.