FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

2N7002HSX MOSFET 2N-CH 60V 0.32A 6TSSOP Nexperia USA Inc.	4,552 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.51517 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	-	2 N-Channel (Dual)	-	60V	320mA (Ta)	1.6Ohm @ 500mA, 10V	2.5V @ 250µA	0.5nC @ 4.5V	34pF @ 10V	420mW	-55°C ~ 150°C (TA)	Automotive	AEC-Q101	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
BSC0921NDIATMA1 MOSFET 2N-CH 30V 17A/31A TISON8 Infineon Technologies	18,204 In Stock	1 : ¥12.48000 Cut Tape (CT) 5,000 : ¥5.40021 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Asymmetrical	Logic Level Gate, 4.5V Drive	30V	17A, 31A	5mOhm @ 20A, 10V	2V @ 250µA	8.9nC @ 4.5V	1025pF @ 15V	1W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PowerTDFN	PG-TISON-8

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.