FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

IRF9389TRPBF MOSFET N/P-CH 30V 6.8A/4.6A 8SO Infineon Technologies	3,092 In Stock	1 : ¥7.14000 Cut Tape (CT) 4,000 : ¥1.66378 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	30V	6.8A, 4.6A	27mOhm @ 6.8A, 10V	2.3V @ 10µA	14nC @ 10V	398pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7319TRPBF MOSFET N/P-CH 30V 8SO Infineon Technologies	20,977 In Stock	1 : ¥9.77000 Cut Tape (CT) 4,000 : ¥4.04715 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	-	30V	-	29mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4532DY MOSFET N/P-CH 30V 3.9A 8SOIC onsemi	22,598 In Stock	1 : ¥10.34000 Cut Tape (CT) 2,500 : ¥4.26933 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	-	30V	3.9A, 3.5A	65mOhm @ 3.9A, 10V	3V @ 250µA	15nC @ 10V	235pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRF7317TRPBF MOSFET N/P-CH 20V 6.6A/5.3A 8SO Infineon Technologies	0 In Stock	1 : ¥8.95000 Cut Tape (CT) 4,000 : ¥3.69887 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	20V	6.6A, 5.3A	29mOhm @ 6A, 4.5V	700mV @ 250µA	27nC @ 4.5V	900pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.