FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

SSM6N15AFU,LF MOSFET 2N-CH 30V 0.1A US6 Toshiba Semiconductor and Storage	42,116 In Stock	1 : ¥2.46000 Cut Tape (CT) 3,000 : ¥0.51883 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	3.6Ohm @ 10mA, 4V	1.5V @ 100µA	-	13.5pF @ 3V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
DMP3028LSD-13 MOSFET 2P-CH 30V 6A 8SO Diodes Incorporated	91,300 In Stock	1 : ¥4.76000 Cut Tape (CT) 2,500 : ¥1.80573 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	-	30V	6A	25mOhm @ 7A, 10V	3V @ 250µA	10.9nC @ 10V	1241pF @ 15V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.