FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

AO4882 MOSFET 2N-CH 40V 8A 8SOIC Alpha & Omega Semiconductor Inc.	1,057,288 In Stock	1 : ¥4.27000 Cut Tape (CT) 3,000 : ¥1.99088 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	40V	8A	19mOhm @ 8A, 10V	2.4V @ 250µA	12nC @ 10V	415pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
APTM20AM04FG MOSFET 2N-CH 200V 372A SP6 Microchip Technology	13 In Stock	1 : ¥2,930.24000 Bulk	-	Bulk	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	200V	372A	5mOhm @ 186A, 10V	5V @ 10mA	560nC @ 10V	28900pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.