FET, MOSFET Arrays

Results: 5
Manufacturer
Diodes IncorporatedEPCTexas InstrumentsVishay Siliconix
Series
-eGaN®NexFET™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)2 N-Channel (Half Bridge)2 P-Channel (Dual)
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
30V50V60V
Current - Continuous Drain (Id) @ 25°C
360mA4.8A20A23A60A
Rds On (Max) @ Id, Vgs
4.4mOhm @ 20A, 5V5.5mOhm @ 20A, 10V55mOhm @ 5A, 10V1.6Ohm @ 500mA, 10V-
Vgs(th) (Max) @ Id
1.5V @ 250µA2.1V @ 250µA2.2V @ 250µA2.5V @ 7mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6nC @ 4.5V5.8nC @ 4.5V6.8nC @ 5V24nC @ 10V160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
46pF @ 25V830pF @ 30V900pF @ 15V1293pF @ 30V6200pF @ 15V
Power - Max
310mW1.2W6W46W-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Package / Case
6-TSSOP, SC-88, SOT-3638-PowerLDFN8-SOIC (0.154", 3.90mm Width)DiePowerPAK® SO-8 Dual
Supplier Device Package
8-LSON (3.3x3.3)8-SODiePowerPAK® SO-8 DualSOT-363
Stocking Options
Environmental Options
Media
Marketplace Product
5Results

Showing
of 5
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
PowerPAK® SO-8 Dual
SI7997DP-T1-GE3
MOSFET 2P-CH 30V 60A PPAK SO8
Vishay Siliconix
16,543
In Stock
1 : ¥17.40000
Cut Tape (CT)
3,000 : ¥7.83005
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
-
30V
60A
5.5mOhm @ 20A, 10V
2.2V @ 250µA
160nC @ 10V
6200pF @ 15V
46W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SOT 363
DMN53D0LDW-7
MOSFET 2N-CH 50V 0.36A SOT363
Diodes Incorporated
41,498
In Stock
1,317,000
Factory
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.47171
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
50V
360mA
1.6Ohm @ 500mA, 10V
1.5V @ 250µA
0.6nC @ 4.5V
46pF @ 25V
310mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
8 SO
DMP6050SSD-13
MOSFET 2P-CH 60V 4.8A 8SO
Diodes Incorporated
35,927
In Stock
305,000
Factory
1 : ¥6.65000
Cut Tape (CT)
2,500 : ¥2.52803
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
-
60V
4.8A
55mOhm @ 5A, 10V
3V @ 250µA
24nC @ 10V
1293pF @ 30V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
8SON
CSD87330Q3D
MOSFET 2N-CH 30V 20A 8LSON
Texas Instruments
28,644
In Stock
1 : ¥8.87000
Cut Tape (CT)
2,500 : ¥5.28508
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Half Bridge)
Logic Level Gate
30V
20A
-
2.1V @ 250µA
5.8nC @ 4.5V
900pF @ 15V
6W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
8-LSON (3.3x3.3)
eGaN Series
EPC2102
GANFET 2N-CH 60V 23A DIE
EPC
3,615
In Stock
1 : ¥75.94000
Cut Tape (CT)
500 : ¥47.88582
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
GaNFET (Gallium Nitride)
2 N-Channel (Half Bridge)
-
60V
23A
4.4mOhm @ 20A, 5V
2.5V @ 7mA
6.8nC @ 5V
830pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
Showing
of 5

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.