FET, MOSFET Arrays

Results: 2
Manufacturer
Comchip TechnologyToshiba Semiconductor and Storage
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 P-Channel (Dual)
FET Feature
-Logic Level Gate, 1.5V Drive
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)660mA (Ta)
Rds On (Max) @ Id, Vgs
520mOhm @ 1A, 4.5V2.2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA1.1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
12pF @ 10V170pF @ 16V
Power - Max
150mW300mW
Operating Temperature
-40°C ~ 150°C (TJ)150°C
Supplier Device Package
SOT-363US6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
213,297
In Stock
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.55813
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate, 1.5V Drive
20V
250mA (Ta)
2.2Ohm @ 100mA, 4.5V
1V @ 1mA
-
12pF @ 10V
300mW
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SOT-363
CJ3139KDW-G
MOSFET 2P-CH 20V 0.66A SOT363
Comchip Technology
4,494
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥1.11298
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
-
20V
660mA (Ta)
520mOhm @ 1A, 4.5V
1.1V @ 250µA
-
170pF @ 16V
150mW
-40°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
Showing
of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.