FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

SQ1922EEH-T1_GE3 MOSFET 2N-CH 20V 0.84A SC70-6 Vishay Siliconix	1,172 In Stock	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥1.29154 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	20V	840mA (Tc)	350mOhm @ 400mA, 4.5V	1.5V @ 250µA	1.2nC @ 4.5V	50pF @ 10V	1.5W	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
DMC2053UVTQ-7 MOSFET N/P-CH 20V 4.6A TSOT26 Diodes Incorporated	10,009 In Stock	1 : ¥3.94000 Cut Tape (CT) 3,000 : ¥1.32320 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel Complementary	-	20V	4.6A (Ta), 3.2A (Ta)	35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V, 5.9nC @ 4.5V	369pF @ 10V, 440pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.