FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

CSD88584Q5DC MOSFET 2N-CH 40V 22VSON-CLIP Texas Instruments	8,449 In Stock	1 : ¥29.80000 Cut Tape (CT) 2,500 : ¥14.49382 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	40V	-	0.95mOhm @ 30A, 10V	2.3V @ 250µA	88nC @ 4.5V	12400pF @ 20V	12W	-55°C ~ 150°C (TJ)	Surface Mount	22-PowerTFDFN	22-VSON-CLIP (5x6)
CSD88599Q5DC MOSFET 2N-CH 60V 22VSON-CLIP Texas Instruments	1,444 In Stock	1 : ¥32.92000 Cut Tape (CT) 2,500 : ¥16.04485 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	60V	-	2.1mOhm @ 30A, 10V	2.5V @ 250µA	27nC @ 4.5V	4840pF @ 30V	12W	-55°C ~ 150°C (TJ)	Surface Mount	22-PowerTFDFN	22-VSON-CLIP (5x6)

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.