FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

SI7216DN-T1-E3 MOSFET 2N-CH 40V 6A PPAK 1212 Vishay Siliconix	9,633 In Stock	1 : ¥13.14000 Cut Tape (CT) 3,000 : ¥5.43267 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	40V	6A	32mOhm @ 5A, 10V	3V @ 250µA	19nC @ 10V	670pF @ 20V	20.8W	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SI4816BDY-T1-GE3 MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC Vishay Siliconix	3,514 In Stock	1 : ¥12.97000 Cut Tape (CT) 2,500 : ¥5.84474 Tape & Reel (TR)	LITTLE FOOT®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	Logic Level Gate	30V	5.8A, 8.2A	18.5mOhm @ 6.8A, 10V	3V @ 250µA	10nC @ 5V	-	1W, 1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.