FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

SI4925BDY-T1-E3 MOSFET 2P-CH 30V 5.3A 8SOIC Vishay Siliconix	6,909 In Stock	1 : ¥11.49000 Cut Tape (CT) 2,500 : ¥4.75827 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	30V	5.3A	25mOhm @ 7.1A, 10V	3V @ 250µA	50nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BUK9K18-40E,115 MOSFET 2N-CH 40V 30A LFPAK56D Nexperia USA Inc.	4,232 In Stock	1 : ¥8.29000 Cut Tape (CT) 1,500 : ¥3.63355 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	40V	30A	16mOhm @ 10A, 10V	2.1V @ 1mA	14.5nC @ 10V	1061pF @ 25V	38W	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.