FET, MOSFET Arrays

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
12V20V
Current - Continuous Drain (Id) @ 25°C
25A60A
Rds On (Max) @ Id, Vgs
3.4mOhm @ 20A, 4.5V16.4mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32nC @ 8V120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1220pF @ 10V5000pF @ 6V
Power - Max
23W46W
Package / Case
PowerPAK® 1212-8 DualPowerPAK® SO-8 Dual
Supplier Device Package
PowerPAK® 1212-8 DualPowerPAK® SO-8 Dual
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
PowerPAK® SO-8 Dual
SI7234DP-T1-GE3
MOSFET 2N-CH 12V 60A PPAK SO8
Vishay Siliconix
13,627
In Stock
1 : ¥23.32000
Cut Tape (CT)
3,000 : ¥11.33794
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
12V
60A
3.4mOhm @ 20A, 4.5V
1.5V @ 250µA
120nC @ 10V
5000pF @ 6V
46W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
PowerPAK® 1212-8 Dual
SI7232DN-T1-GE3
MOSFET 2N-CH 20V 25A PPAK 1212
Vishay Siliconix
10,551
In Stock
1 : ¥7.14000
Cut Tape (CT)
3,000 : ¥2.71757
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
20V
25A
16.4mOhm @ 10A, 4.5V
1V @ 250µA
32nC @ 8V
1220pF @ 10V
23W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.