FET, MOSFET Arrays

Results: 6
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 P-Channel (Dual)N and P-Channel
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
12V20V30V
Current - Continuous Drain (Id) @ 25°C
1.34A, 1.14A3.3A3.8A4.7A, 3.2A6.2A
Rds On (Max) @ Id, Vgs
30mOhm @ 5.8A, 10V40mOhm @ 4.2A, 4.5V45mOhm @ 5A, 4.5V61mOhm @ 3.6A, 4.5V70mOhm @ 2.8A, 4.5V400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 250µA1.4V @ 250µA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.74nC @ 4.5V6.5nC @ 4.5V10.6nC @ 10V12nC @ 10V15nC @ 8V17.9nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
60.67pF @ 16V389pF @ 10V500pF @ 15V536pF @ 10V713pF @ 10V915pF @ 6V
Power - Max
730mW1W1.12W1.4W
Package / Case
6-UDFN Exposed PadSOT-23-6
Supplier Device Package
SOT-26U-DFN2020-6 (Type B)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 26
DMC2700UDM-7
MOSFET N/P-CH 20V SOT26
Diodes Incorporated
1,187,137
In Stock
5,052,000
Factory
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.42070
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
20V
1.34A, 1.14A
400mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
60.67pF @ 16V
1.12W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
U-DFN2020-6
DMP2160UFDB-7
MOSFET 2P-CH 20V 3.8A 6UDFN
Diodes Incorporated
178,799
In Stock
360,000
Factory
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥1.07754
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
Logic Level Gate
20V
3.8A
70mOhm @ 2.8A, 4.5V
900mV @ 250µA
6.5nC @ 4.5V
536pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
U-DFN2020-6
DMN3032LFDBQ-7
MOSFET 2N-CH 30V 6.2A 6UDFN
Diodes Incorporated
105,718
In Stock
243,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥1.27047
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
30V
6.2A
30mOhm @ 5.8A, 10V
2V @ 250µA
10.6nC @ 10V
500pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
U-DFN2020-6
DMN2050LFDB-13
MOSFET 2N-CH 20V 3.3A 6UDFN
Diodes Incorporated
23,264
In Stock
1 : ¥3.20000
Cut Tape (CT)
10,000 : ¥0.94310
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
20V
3.3A
45mOhm @ 5A, 4.5V
1V @ 250µA
12nC @ 10V
389pF @ 10V
730mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
U-DFN2020-6
DMP1046UFDB-7
MOSFET 2P-CH 12V 3.8A 6UDFN
Diodes Incorporated
5,670
In Stock
105,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.99221
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
-
12V
3.8A
61mOhm @ 3.6A, 4.5V
1V @ 250µA
17.9nC @ 8V
915pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
U-DFN2020-6
DMC2041UFDB-7
MOSFET N/P-CH 20V 4.7A 6UDFN
Diodes Incorporated
8,639
In Stock
123,000
Factory
1 : ¥6.65000
Cut Tape (CT)
3,000 : ¥2.52802
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
-
20V
4.7A, 3.2A
40mOhm @ 4.2A, 4.5V
1.4V @ 250µA
15nC @ 8V
713pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
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FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.