FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

ALD1116SAL MOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc.	2,788 In Stock	1 : ¥34.97000 Tube	-	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Matched Pair	-	10.6V	-	500Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ALD1117SAL MOSFET 2P-CH 10.6V 8SOIC Advanced Linear Devices Inc.	50 In Stock	1 : ¥34.97000 Tube	-	Tube	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual) Matched Pair	-	10.6V	-	1800Ohm @ 5V	1.2V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.