FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

DMN63D8LDW-13 MOSFET 2N-CH 30V 0.22A SOT363 Diodes Incorporated	8,052 In Stock 840,000 Factory	1 : ¥2.46000 Cut Tape (CT) 10,000 : ¥0.32279 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	30V	220mA	2.8Ohm @ 250mA, 10V	1.5V @ 250µA	0.87nC @ 10V	22pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SSM6P36TU,LF MOSFET 2P-CH 20V 0.33A UF6 Toshiba Semiconductor and Storage	6,893 In Stock	1 : ¥4.10000 Cut Tape (CT) 3,000 : ¥0.91394 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate, 1.5V Drive	20V	330mA (Ta)	1.31Ohm @ 100mA, 4.5V	1V @ 1mA	1.2nC @ 4V	43pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.