FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

ECH8661-TL-H MOSFET N/P-CH 30V 7A/5.5A 8ECH onsemi	8,366 In Stock	1 : ¥8.29000 Cut Tape (CT) 3,000 : ¥3.43288 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	30V	7A, 5.5A	24mOhm @ 3.5A, 10V	-	11.8nC @ 10V	710pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Leads	8-ECH
FDS6930B MOSFET 2N-CH 30V 5.5A 8SOIC onsemi	6,190 In Stock	1 : ¥5.34000 Cut Tape (CT) 2,500 : ¥1.79913 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	30V	5.5A	38mOhm @ 5.5A, 10V	3V @ 250µA	3.8nC @ 5V	412pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.