FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

DMC3025LSD-13 MOSFET N/P-CH 30V 6.5A/4.2A 8SO Diodes Incorporated	23,773 In Stock 765,000 Factory	1 : ¥3.69000 Cut Tape (CT) 2,500 : ¥1.24605 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	30V	6.5A, 4.2A	20mOhm @ 7.4A, 10V	2V @ 250µA	9.8nC @ 10V	501pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN32D2LDF-7 MOSFET 2N-CH 30V 0.4A SOT353 Diodes Incorporated	46,034 In Stock	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥0.66535 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Source	Logic Level Gate	30V	400mA	1.2Ohm @ 100mA, 4V	1.2V @ 250µA	-	39pF @ 3V	280mW	-55°C ~ 150°C (TJ)	Surface Mount	5-TSSOP, SC-70-5, SOT-353	SOT-353

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.