FET, MOSFET Arrays

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)N and P-Channel
FET Feature
-Logic Level Gate
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)1.03A, 700mA
Rds On (Max) @ Id, Vgs
480mOhm @ 200mA, 5V1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
0.5nC @ 4.5V-
Input Capacitance (Ciss) (Max) @ Vds
12.5pF @ 15V37.1pF @ 10V
Power - Max
125mW (Ta)450mW
Package / Case
SOT-563, SOT-666SOT-963
Supplier Device Package
SOT-563SOT-963
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-963
NTUD3174NZT5G
MOSFET 2N-CH 20V 0.22A SOT963
onsemi
11,134
In Stock
1 : ¥9.03000
Cut Tape (CT)
8,000 : ¥2.01271
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
20V
220mA (Ta)
1.5Ohm @ 100mA, 4.5V
1V @ 100µA
-
12.5pF @ 15V
125mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
SOT 563
DMC2400UV-7
MOSFET N/P-CH 20V SOT563
Diodes Incorporated
153,454
In Stock
2,382,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.57291
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
20V
1.03A, 700mA
480mOhm @ 200mA, 5V
900mV @ 250µA
0.5nC @ 4.5V
37.1pF @ 10V
450mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.