FET, MOSFET Arrays

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)N and P-Channel
Drain to Source Voltage (Vdss)
20V60V
Current - Continuous Drain (Id) @ 25°C
1.07A, 845mA3.3A
Rds On (Max) @ Id, Vgs
80mOhm @ 12A, 10V450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.74nC @ 4.5V12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
60.67pF @ 10V588pF @ 30V
Power - Max
330mW1.2W
Package / Case
6-TSSOP, SC-88, SOT-3638-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOSOT-363
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 363
DMG1016UDW-7
MOSFET N/P-CH 20V SOT363
Diodes Incorporated
61,337
In Stock
597,000
Factory
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.65383
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
20V
1.07A, 845mA
450mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
60.67pF @ 10V
330mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
8 SO
DMN6070SSD-13
MOSFET 2N-CH 60V 3.3A 8SO
Diodes Incorporated
34,058
In Stock
302,500
Factory
1 : ¥4.43000
Cut Tape (CT)
2,500 : ¥1.49522
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
60V
3.3A
80mOhm @ 12A, 10V
3V @ 250µA
12.3nC @ 10V
588pF @ 30V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.