FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

SI1024X-T1-GE3 MOSFET 2N-CH 20V 485MA SC89 Vishay Siliconix	88,242 In Stock	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥1.23147 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	485mA	700mOhm @ 600mA, 4.5V	900mV @ 250µA	0.75nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-563, SOT-666	SC-89 (SOT-563F)
PMDT290UNE,115 MOSFET 2N-CH 20V 0.8A SOT666 Nexperia USA Inc.	79,103 In Stock	1 : ¥3.78000 Cut Tape (CT) 4,000 : ¥0.83947 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	800mA	380mOhm @ 500mA, 4.5V	950mV @ 250µA	0.68nC @ 4.5V	83pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-563, SOT-666	SOT-666
DMG1024UV-7 MOSFET 2N-CH 20V 1.38A SOT563 Diodes Incorporated	19,108 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.86000 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	1.38A	450mOhm @ 600mA, 4.5V	1V @ 250µA	0.74nC @ 4.5V	60.67pF @ 16V	530mW	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-563, SOT-666	SOT-563
PJX8808_R1_00001 20V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	6,485 In Stock	1 : ¥3.28000 Cut Tape (CT) 4,000 : ¥0.70194 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate, 1.2V Drive	20V	500mA (Ta)	400mOhm @ 500mA, 4.5V	900mV @ 250µA	1.4nC @ 4.5V	67pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-563, SOT-666	SOT-563

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.