FET, MOSFET Arrays

Results: 2
Manufacturer
onsemiPanjit International Inc.
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Feature
-Logic Level Gate
Current - Continuous Drain (Id) @ 25°C
600mA (Ta)830mA
Rds On (Max) @ Id, Vgs
340mOhm @ 600mA, 4.5V500mOhm @ 830mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs
2.2nC @ 4.5V3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
135pF @ 10V151pF @ 10V
Power - Max
300mW (Ta)446mW
Supplier Device Package
SOT-563SOT-563F
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-563
FDY1002PZ
MOSFET 2P-CH 20V 830MA SOT563F
onsemi
26,976
In Stock
12,000
Factory
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥1.49580
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
Logic Level Gate
20V
830mA
500mOhm @ 830mA, 4.5V
1V @ 250µA
3.1nC @ 4.5V
135pF @ 10V
446mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563F
SOT-563, SOT-666
PJX8803_R1_00001
20V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
3,415
In Stock
1 : ¥3.28000
Cut Tape (CT)
4,000 : ¥0.88762
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
-
20V
600mA (Ta)
340mOhm @ 600mA, 4.5V
1V @ 250µA
2.2nC @ 4.5V
151pF @ 10V
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.