FET, MOSFET Arrays

Results: 4
Manufacturer
Rohm SemiconductorVishay Siliconix
Series
-TrenchFET®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 P-Channel (Dual)N and P-Channel
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
12V20V30V60V
Current - Continuous Drain (Id) @ 25°C
3A (Ta), 2A (Ta)4.5A4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs
21.5mOhm @ 5A, 10V41mOhm @ 4.3A, 4.5V65mOhm @ 3A, 10V112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 250µA2.2V @ 250µA2.5V @ 1mA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
4nC @ 5V, 7.2nC @ 5V11.5nC @ 10V13nC @ 10V26nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
270pF @ 10V, 750pF @ 10V425pF @ 10V445pF @ 15V1500pF @ 6V
Power - Max
1.1W (Ta)1.9W (Ta), 7.8W (Tc)7.8W
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
8-SMD, Flat LeadsPowerPAK® SC-70-6 Dual
Supplier Device Package
PowerPAK® SC-70-6 DualTSMT8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
PowerPAK SC-70-6 Dual
SIA931DJ-T1-GE3
MOSFET 2P-CH 30V 4.5A SC70-6
Vishay Siliconix
43,402
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.40650
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
Logic Level Gate
30V
4.5A
65mOhm @ 3A, 10V
2.2V @ 250µA
13nC @ 10V
445pF @ 15V
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
PowerPAK SC-70-6 Dual
SIA975DJ-T1-GE3
MOSFET 2P-CH 12V 4.5A SC70-6
Vishay Siliconix
87,137
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.91420
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
Logic Level Gate
12V
4.5A
41mOhm @ 4.3A, 4.5V
1V @ 250µA
26nC @ 8V
1500pF @ 6V
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
SIA938DJT-T1-GE3
SIA938DJT-T1-GE3
MOSFET 2N-CH 20V 4.5A SC70-6
Vishay Siliconix
11,596
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.48803
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
20V
4.5A (Ta), 4.5A (Tc)
21.5mOhm @ 5A, 10V
1.5V @ 250µA
11.5nC @ 10V
425pF @ 10V
1.9W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
846~TSMT8~~8 Top
QS8M31TR
MOSFET N/P-CH 60V 3A/2A TSMT8
Rohm Semiconductor
6,178
In Stock
1 : ¥6.57000
Cut Tape (CT)
3,000 : ¥2.50498
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
-
60V
3A (Ta), 2A (Ta)
112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
2.5V @ 1mA, 3V @ 1mA
4nC @ 5V, 7.2nC @ 5V
270pF @ 10V, 750pF @ 10V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Leads
TSMT8
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of 4

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.