FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

FDC6312P MOSFET 2P-CH 20V 2.3A SSOT6 onsemi	6,894 In Stock	1 : ¥6.24000 Cut Tape (CT) 3,000 : ¥2.36319 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	20V	2.3A	115mOhm @ 2.3A, 4.5V	1.5V @ 250µA	7nC @ 4.5V	467pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT™-6
CSD85312Q3E MOSFET 2N-CH 20V 39A 8VSON Texas Instruments	7,220 In Stock 6,458 Marketplace	1 : ¥10.10000 Cut Tape (CT) 2,500 : ¥4.18782 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Bulk	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Source	Logic Level Gate, 5V Drive	20V	39A	12.4mOhm @ 10A, 8V	1.4V @ 250µA	15.2nC @ 4.5V	2390pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-VSON (3.3x3.3)

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.