FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

SI4948BEY-T1-E3 MOSFET 2P-CH 60V 2.4A 8SOIC Vishay Siliconix	14,630 In Stock	1 : ¥10.43000 Cut Tape (CT) 2,500 : ¥4.30102 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	60V	2.4A	120mOhm @ 3.1A, 10V	3V @ 250µA	22nC @ 10V	-	1.4W	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMHC4035LSDQ-13 MOSFET 2N/2P-CH 40V 4.5A 8SO Diodes Incorporated	2,269 In Stock 137,500 Factory	1 : ¥8.95000 Cut Tape (CT) 2,500 : ¥3.44812 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N and 2 P-Channel (Full Bridge)	-	40V	4.5A (Ta), 3.7A (Ta)	45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V	3V @ 250µA	12.5nC @ 10V, 11.1nC @ 10V	574pF @ 20V, 587pF @ 20V	1.5W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.