FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

DMG6601LVT-7 MOSFET N/P-CH 30V 3.8A TSOT26 Diodes Incorporated	48,807 In Stock 2,769,000 Factory	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.68119 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	30V	3.8A, 2.5A	55mOhm @ 3.4A, 10V	1.5V @ 250µA	12.3nC @ 10V	422pF @ 15V	850mW	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
QS6K21FRATR MOSFET 2N-CH 45V 1A TSMT6 Rohm Semiconductor	9,298 In Stock	1 : ¥5.42000 Cut Tape (CT) 3,000 : ¥2.06780 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	45V	1A (Ta)	420mOhm @ 1A, 4.5V	1.5V @ 1mA	2.1nC @ 4.5V	95pF @ 10V	950mW (Ta)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.