FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

DMN2019UTS-13 MOSFET 2N-CH 20V 5.4A 8TSSOP Diodes Incorporated	14,824 In Stock	1 : ¥3.20000 Cut Tape (CT) 2,500 : ¥1.07161 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	5.4A	18.5mOhm @ 7A, 10V	950mV @ 250µA	8.8nC @ 4.5V	143pF @ 10V	780mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI6968BEDQ-T1-E3 MOSFET 2N-CH 20V 5.2A 8TSSOP Vishay Siliconix	5,014 In Stock	1 : ¥10.92000 Cut Tape (CT) 3,000 : ¥4.52738 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	5.2A	22mOhm @ 6.5A, 4.5V	1.6V @ 250µA	18nC @ 4.5V	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.