FET, MOSFET Arrays

Results: 2
Manufacturer
Diodes IncorporatedRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)N and P-Channel
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
20V30V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)6.5A, 4.2A
Rds On (Max) @ Id, Vgs
20mOhm @ 7.4A, 10V1.2Ohm @ 200mA, 2.5V
Vgs(th) (Max) @ Id
1V @ 1mA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.8nC @ 10V-
Input Capacitance (Ciss) (Max) @ Vds
25pF @ 10V501pF @ 15V
Power - Max
150mW1.2W
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-563, SOT-666
Supplier Device Package
8-SOEMT6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
8 SO
DMC3025LSD-13
MOSFET N/P-CH 30V 6.5A/4.2A 8SO
Diodes Incorporated
24,123
In Stock
792,500
Factory
1 : ¥3.69000
Cut Tape (CT)
2,500 : ¥1.24605
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
30V
6.5A, 4.2A
20mOhm @ 7.4A, 10V
2V @ 250µA
9.8nC @ 10V
501pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
EMT6_EMT6 PKg
EM6K7T2CR
MOSFET 2N-CH 20V 0.2A EMT6
Rohm Semiconductor
8,192
In Stock
1 : ¥3.28000
Cut Tape (CT)
8,000 : ¥1.04478
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
20V
200mA (Ta)
1.2Ohm @ 200mA, 2.5V
1V @ 1mA
-
25pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
Showing
of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.