FET, MOSFET Arrays

Results: 2
Manufacturer
onsemiPanjit International Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
50V60V
Current - Continuous Drain (Id) @ 25°C
115mA360mA (Ta)
Rds On (Max) @ Id, Vgs
1.6Ohm @ 500mA, 10V7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
1.5V @ 250µA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1nC @ 4.5V-
Power - Max
200mW236mW (Ta)
Supplier Device Package
SC-88 (SC-70-6)SOT-363
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 363
2N7002DW
MOSFET 2N-CH 60V 0.115A SC88
onsemi
79,761
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83562
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
60V
115mA
7.5Ohm @ 50mA, 5V
2V @ 250µA
-
50pF @ 25V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88 (SC-70-6)
6-TSSOP, SC-88, SOT-363
PJT138K_R1_00001
50V N-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
10,629
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.39582
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
50V
360mA (Ta)
1.6Ohm @ 500mA, 10V
1.5V @ 250µA
1nC @ 4.5V
50pF @ 25V
236mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
Showing
of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.