FET, MOSFET Arrays

Results: 2
Manufacturer
Rohm SemiconductorVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 P-Channel (Dual)
FET Feature
Logic Level GateLogic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss)
12V50V
Current - Continuous Drain (Id) @ 25°C
200mA1.3A
Rds On (Max) @ Id, Vgs
390mOhm @ 1A, 4.5V2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.2nC @ 8V-
Input Capacitance (Ciss) (Max) @ Vds
25pF @ 10V120pF @ 6V
Power - Max
120mW1.25W
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SC-70-6UMT6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
UMT6
UM6K33NTN
MOSFET 2N-CH 50V 0.2A UMT6
Rohm Semiconductor
749,828
In Stock
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.46952
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate, 1.2V Drive
50V
200mA
2.2Ohm @ 200mA, 4.5V
1V @ 1mA
-
25pF @ 10V
120mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
SC-70-6
SI1965DH-T1-GE3
MOSFET 2P-CH 12V 1.3A SC70-6
Vishay Siliconix
4,873
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.34537
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
Logic Level Gate
12V
1.3A
390mOhm @ 1A, 4.5V
1V @ 250µA
4.2nC @ 8V
120pF @ 6V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.