FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

BUK9K17-60EX MOSFET 2N-CH 60V 26A LFPAK56D Nexperia USA Inc.	5,033 In Stock	1 : ¥11.25000 Cut Tape (CT) 1,500 : ¥4.93010 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	26A	15.6mOhm @ 10A, 10V	2.1V @ 1mA	16.5nC @ 5V	2223pF @ 25V	53W	-55°C ~ 175°C (TJ)	Automotive	AEC-Q100	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
NTTFD4D0N04HLTWG MOSFET 2N-CH 40V 15A/60A 12WQFN onsemi	2,950 In Stock 3,000 Factory	1 : ¥15.19000 Cut Tape (CT) 3,000 : ¥6.83751 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	40V	15A (Ta), 60A (Tc)	4.5mOhm @ 10A, 10V	2V @ 50µA	18nC @ 10V	1100pF @ 20V	1.7W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	12-PowerWQFN	12-WQFN (3.3x3.3)
SIZ250DT-T1-GE3 MOSFET 2N-CH 60V 14A 8PWRPAIR Vishay Siliconix	9,287 In Stock	1 : ¥9.52000 Cut Tape (CT) 3,000 : ¥3.93882 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	60V	14A (Ta), 38A (Tc)	12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V	2.4V @ 250µA	21nC @ 10V	840pF @ 30V, 790pF @ 30V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.