FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

BSD235NH6327XTSA1 MOSFET 2N-CH 20V 0.95A SOT363 Infineon Technologies	38,268 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.80587 Tape & Reel (TR)	OptiMOS™ 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	950mA	350mOhm @ 950mA, 4.5V	1.2V @ 1.6µA	0.32nC @ 4.5V	63pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-PO
SI7288DP-T1-GE3 MOSFET 2N-CH 40V 20A PPAK SO8 Vishay Siliconix	107,387 In Stock	1 : ¥12.07000 Cut Tape (CT) 3,000 : ¥4.98012 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	40V	20A	19mOhm @ 10A, 10V	2.8V @ 250µA	15nC @ 10V	565pF @ 20V	15.6W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.