Diode Arrays

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-CoolSiC™+
Current - Average Rectified (Io) (per Diode)
10A (DC)44A (DC)
Voltage - Forward (Vf) (Max) @ If
1.65 V @ 15 A1.75 V @ 10 A
Current - Reverse Leakage @ Vr
124 µA @ 1200 V200 µA @ 1200 V
Supplier Device Package
PG-TO247-3TO-247-3
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Diode Configuration
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
AUIRFP4310Z BACK
IDW30G120C5BFKSA1
DIODE ARR SIC 1200V 44A TO247-3
Infineon Technologies
1,180
In Stock
1 : ¥115.92000
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1 Pair Common Cathode
SiC (Silicon Carbide) Schottky
1200 V
44A (DC)
1.65 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
124 µA @ 1200 V
-55°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
TO-247-3
FFSH20120ADN-F155
DIODE ARR SIC 1200V 10A TO247-3
onsemi
335
In Stock
14,400
Factory
1 : ¥61.98000
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-
Tube
Active
1 Pair Common Cathode
SiC (Silicon Carbide) Schottky
1200 V
10A (DC)
1.75 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
200 µA @ 1200 V
-55°C ~ 175°C
Through Hole
TO-247-3
TO-247-3
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Diode Arrays

Products within the diode and rectifier array family incorporate two or more discrete diodes within a single package. They are characterized in terms similar to those used for single discrete diodes, with the addition of a "Diode Configuration" attribute indicating the presence and character of any internal connections between the diodes in the device. Note that arrays with a full-bridge configuration are specifically excluded, and listed as a separate product family.