Diode Arrays

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Series
-SBR®
Technology
SiC (Silicon Carbide) SchottkySuper Barrier
Voltage - DC Reverse (Vr) (Max)
300 V1200 V
Current - Average Rectified (Io) (per Diode)
10A (DC)20A
Voltage - Forward (Vf) (Max) @ If
890 mV @ 20 A1.75 V @ 10 A
Current - Reverse Leakage @ Vr
100 µA @ 300 V200 µA @ 1200 V
Operating Temperature - Junction
-65°C ~ 175°C-55°C ~ 175°C
Package / Case
TO-220-3TO-247-3
Supplier Device Package
TO-220-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Diode Configuration
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
TO-220-3
SBR40U300CT
DIODE ARR SBR 300V 20A TO220-3
Diodes Incorporated
4,609
In Stock
2,350
Factory
1 : ¥17.82000
Tube
Tube
Active
1 Pair Common Cathode
Super Barrier
300 V
20A
890 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 µA @ 300 V
-65°C ~ 175°C
Through Hole
TO-220-3
TO-220-3
TO-247-3
FFSH20120ADN-F155
DIODE ARR SIC 1200V 10A TO247-3
onsemi
335
In Stock
13,950
Factory
1 : ¥61.98000
Tube
-
Tube
Active
1 Pair Common Cathode
SiC (Silicon Carbide) Schottky
1200 V
10A (DC)
1.75 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 1200 V
-55°C ~ 175°C
Through Hole
TO-247-3
TO-247-3
Showing
of 2

Diode Arrays

Products within the diode and rectifier array family incorporate two or more discrete diodes within a single package. They are characterized in terms similar to those used for single discrete diodes, with the addition of a "Diode Configuration" attribute indicating the presence and character of any internal connections between the diodes in the device. Note that arrays with a full-bridge configuration are specifically excluded, and listed as a separate product family.