TK3A65DA(STA4,QM)

DigiKey Part Number
TK3A65DA(STA4QM)-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK3A65DA(STA4,QM)
Description
MOSFET N-CH 650V 2.5A TO220SIS
Manufacturer Standard Lead Time
32 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 2.5A (Ta) 35W (Tc) Through Hole TO-220SIS
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
π-MOSVII
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.51Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK3A65
Quantity
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥11.66000¥11.66
50¥9.38060¥469.03
100¥7.43400¥743.40
500¥6.30136¥3,150.68
1,000¥5.13310¥5,133.10
2,000¥4.83221¥9,664.42
5,000¥4.60209¥23,010.45
10,000¥4.51539¥45,153.90
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.