TP44110HB

DigiKey Part Number
2713-TP44110HB-ND
Manufacturer
Manufacturer Product Number
TP44110HB
Description
GANFET 2N-CH 650V 30QFN
Manufacturer Standard Lead Time
13 Weeks
Customer Reference
Detailed Description
Mosfet Array 650V 19A (Tc) Surface Mount 30-QFN (8x10)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Manufacturer
Tagore Technology
Series
-
Packaging
Tray
Part Status
Active
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Rds On (Max) @ Id, Vgs
118mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id
2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs
3nC @ 6V
Input Capacitance (Ciss) (Max) @ Vds
110pF @ 400V
Power - Max
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
30-PowerWFQFN
Supplier Device Package
30-QFN (8x10)
Base Product Number
All prices are in CNY
Tray
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥56.48000¥56.48
10¥56.44200¥564.42
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.