IPB80N04S2H4ATMA1 is Obsolete and no longer manufactured.
Available Substitutes:

Similar


Infineon Technologies
In Stock: 1,766
Unit Price: ¥20.77000
Datasheet

Similar


Infineon Technologies
In Stock: 4,372
Unit Price: ¥17.40000
Datasheet

Similar


Infineon Technologies
In Stock: 3,493
Unit Price: ¥22.82000
Datasheet

Similar


Infineon Technologies
In Stock: 460
Unit Price: ¥17.73000
Datasheet

Parametric Equivalent


Infineon Technologies
In Stock: 702
Unit Price: ¥31.85000
Datasheet

Similar


Alpha & Omega Semiconductor Inc.
In Stock: 4,324
Unit Price: ¥15.43000
Datasheet

Similar


Nexperia USA Inc.
In Stock: 7,454
Unit Price: ¥22.58000
Datasheet

Similar


STMicroelectronics
In Stock: 944
Unit Price: ¥19.13000
Datasheet

Similar


STMicroelectronics
In Stock: 1,365
Unit Price: ¥22.25000
Datasheet

Similar


STMicroelectronics
In Stock: 455
Unit Price: ¥29.56000
Datasheet

IPB80N04S2H4ATMA1

DigiKey Part Number
IPB80N04S2H4ATMA1TR-ND - Tape & Reel (TR)
Manufacturer
Manufacturer Product Number
IPB80N04S2H4ATMA1
Description
MOSFET N-CH 40V 80A TO263-3
Customer Reference
Detailed Description
N-Channel 40 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tape & Reel (TR)
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
148 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
Base Product Number