Single IGBTs

Results: 3
Packaging
Tape & Reel (TR)Tube
IGBT Type
-NPT
Current - Collector (Ic) (Max)
10 A12 A16 A
Current - Collector Pulsed (Icm)
20 A24 A40 A
Vce(on) (Max) @ Vge, Ic
4V @ 15V, 6A5V @ 15V, 11A6V @ 15V, 5A
Power - Max
75 W140 W190 W
Switching Energy
380µJ (off)900µJ (off)-
Gate Charge
20 nC29 nC65 nC
Td (on/off) @ 25°C
36ns/160ns40ns/250ns46ns/190ns
Test Condition
850V, 10A, 22Ohm, 15V850V, 16A, 10Ohm, 15V1360V, 6A, 33Ohm, 15V
Supplier Device Package
TO-268TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-268
IXGT16N170A
IGBT NPT 1700V 16A TO268AA
IXYS
330
In Stock
1 : ¥144.08000
Tube
-
Tube
Active
NPT
1700 V
16 A
40 A
5V @ 15V, 11A
190 W
900µJ (off)
Standard
65 nC
36ns/160ns
850V, 16A, 10Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA
IGBT 1700V 12A TO268
IXGT6N170-TRL
IGBT 1700V 12A TO268
IXYS
0
In Stock
Check Lead Time
400 : ¥67.93428
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
-
1700 V
12 A
24 A
4V @ 15V, 6A
75 W
-
Standard
20 nC
40ns/250ns
1360V, 6A, 33Ohm, 15V
36 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
TO-268
IXGT10N170A
IGBT NPT 1700V 10A TO268AA
IXYS
0
In Stock
Check Lead Time
300 : ¥83.71947
Tube
-
Tube
Active
NPT
1700 V
10 A
20 A
6V @ 15V, 5A
140 W
380µJ (off)
Standard
29 nC
46ns/190ns
850V, 10A, 22Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA
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Single IGBTs


Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.