Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS138LT1G MOSFET N-CH 50V 200MA SOT23-3 onsemi	91,022 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.52959 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	5V	3.5Ohm @ 200mA, 5V	1.5V @ 1mA	-	±20V	50 pF @ 25 V	-	225mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
DMP10H4D2S-7 MOSFET P-CH 100V 270MA SOT23 Diodes Incorporated	69,552 In Stock 2,445,000 Factory	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.71143 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	270mA (Ta)	4V, 10V	4.2Ohm @ 500mA, 10V	3V @ 250µA	1.8 nC @ 10 V	±20V	87 pF @ 25 V	-	380mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSS123W-7-F MOSFET N-CH 100V 170MA SOT323 Diodes Incorporated	464,128 In Stock 1,056,000 Factory	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.40266 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	2V @ 1mA	-	±20V	60 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.